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Digital Library / STP / STP1340-EB
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Recombination Lifetime Measurements in Silicon
Gupta D, Backer FR, Hughes W
Pages: 379
Published: 1998
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Presents state-of-the-art research on measurement interpretation, lifetime applications, measurement interferences and future directions for silicon and device processing. This unique volume features 30 comprehensive, peer-reviewed papers from an array of international experts in the field covering such topics as: • Lifetime Concepts • Photoconductivity Techniques • Elymat Techniques • Surface Photovoltaic Techniques • Comparisons Between Measuring Techniques • Applications of Lifetime Measurement in Silicon • Standardization and Industry Practices • Round Robin Testing Results. This is an invaluable publication for semiconductor process, equipment and reliability engineers, fab technologists, quality engineers and silicon material scientists, as well as material characterization analysts and device engineers.
Table of Contents
Overview PDF
Overview
Gupta D., Backer F., Hughes W.
Recombination Lifetimes in Silicon
Schroder D.
Minority Carrier Diffusion Length Degradation in Silicon: Who is the Culprit?
Weber E., Istratov A., McHugo S., Hieslmair H., Flink C.
Aspects of Silicon Contamination Control by Lifetime Measurements
Zoth G.
Carrier Lifetime Measurements by Microwave Photoconductivity Decay Method
Hashizume H., Sumie S., Nakai Y.
The Optical Excitation Effect in Transition Metal Doped CZ Silicon Wafers Revealed by the Microwave Photoconductive Decay Lifetime Measurement
Kurita K., Shingyouji T.
Contactless Frequency Resolved Photoconductance (FR-PC) Measurement of Iron Contaminated P-Type Silicon
Romanowski A., Buczkowski A., Karoui A., Rozgonyi G.
Lifetime Measured by Low Injection Level μ-PCD Technique
Swiatkowski C.
Effects of Sample Inhomogeneity and Geometry on Photoconductivity Decay
Wang T., Ciszek T.
New Developments of the Elymat Technique
Eichinger P.
Optimization and Control of Elymat Lifetime Measurement for Use in a Manufacturing Setting
Keefe G., Hughes W.
Present Status of the Surface Photovoltage Method (SPV) for Measuring Minority Carrier Diffusion Length and Related Parameters
Lagowski J., Edelman P., Faifer V.
Non-Contact Measurements of the Minority Carrier Recombination Lifetime at the Silicon Surface
Kamieniecki E.
Monitoring of Surface Minority Carrier Lifetime Using Modulated Photocurrent
Liberman S.
Non-Contact Silicon Epilayer and Subsurface Characterization with UV/mm Wave Technique
Ogita Y., Tate N., Masumura H., Miyazaki M., Yakushiji K.
Canalysis of Photoconductance Decay and Surface Photovoltage Techniques: Theoretical Perspective and Experimental Evidence
Buczkowski A.
Application and Comparison of SPV and μPCD for Iron Measurement in Silicon Wafer Manufacturing
Pan Y.
Problems and Possibilities of Comparing Different Lifetime Measuring Instruments and Techniques
Pavelka T.
Metallic Contamination from Wafer Handling
Beaudoin F., Simard-Normandin M., Meunier M.
The Application of Minority Carrier Lifetime Techniques in Modern CZ Silicon
Falster R., Borionetti G.
Recombination Lifetime Variations and Defect Introduction by Rapid Thermal Processing
Karoui A., Zhang Q., Romanowski A., Rozgonyi G., Rushbrook P., Daviet J.
Influence of Iron and Copper on Minority Carrier Recombination Lifetime in Silicon
Kempf A., Blöchl P., Huber A., Fabry F., Meinecke L.
Characteristics and Evaluation Methods of Carrier Recombination Lifetimes in High-quality Silicon Wafers
Kitagawara Y., Yoshida T., Koide T., Hayamizu Y.
Silicon Lifetime Degradation as a Function of Wet Chemical Cleans and Chemical Purity
Linn J., Rouse G., Wereb W., Leggett R., Slasor S., Lowry R., Cameron R., Canfield R.
Influence of Metal Impurities on Lifetime
Morimasa M.
Oxygen Precipitation Characterization Using the Elymat Technique
Obermeier G., Hage J., Huber D.
Application of Recombination Lifetime Measurements in Silicon Wafer Manufacturing
Seacrist M.
Spatial Nonuniformities in the Minority-Carrier Diffusion Length/Lifetime: Measurement and Implications on a Large-Area Device Performance
Sopori B., Chen W., Symko M.
Measurement of Minority Carrier Recombination Lifetime in Silicon Wafers by Measurement of Photoconductivity Decay by Microwave Reflectance: Result of Round Robin Test
Miyazaki M., Kawai K., Ichimura M.
Results of the Lifetime Round Robins Done in the Framework of the Semi M6 Solar Silicon Standardization Task Force
Schönecker A., Koch W.
Appendix I: Panel Discussions
Author Index
Subject Index
Committee: F01
Paper ID: STP1340-EB
DOI: 10.1520/STP1340-EB
ISBN-EB: 978-0-8031-5389-9
 ASTM International is a member of CrossRef.
0-8031-2489-9
978-0-8031-2489-9
STP1340-EB
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